166 listova 4676781 bytes Danković, Danijel, 1976- Prijić, Zoran Manić, Ivica Ristić, Goran Đorić Veljković, Snežana 2025 In this dissertation, the analysis and development of the modelof the threshold voltage shift of p-channel power VDMOStransistors induced with different types of stressing is presented.Types of stresses include static negative bias temperaturestressing, pulsed negative bias temperature stressing, irradiationand magnetic field. For each type of stressing, underdifferent experiment conditions, several equivalent electricalcircuits for modelling of threshold voltage shift are presented.Values of the elements of the electrical circuits are relatedto the experimental conditions through in detail explainedmathematical relations. Validation of the equivalent circuitmodels is performed through calculation of absolute and relativeerror between experimental and modelled results. Theanalysis in certain parts also includes the application of theproposed models to other types of p-channel transistors. Thedeveloped models will enable the assessment of the value ofthe threshold voltage during operation, thereby enabling predictionof device lifetime. Analysis and conclusions are basedon experimental measurements, automated data processingPython scripts, numerical simulations and simulation resultsusing the LTspice software. Biografija autora sa bibliografijom: list. 158-166Bibliografija: list. 140-157 Datum odbrane: 2.12.2025. Microelectronics and Microsystems https://phaidrani.ni.ac.rs/o:3235 cobiss:184051721 thesis:8808 http://creativecommons.org/licenses/by-nc-nd/3.0/at/legalcode srp info:eu-repo/semantics/bachelorThesis Mitrović, Nikola, 1994- Modelovanje promena napona praga r-kanalnih VDMOS tranzistora snage izazvanih različitim tipovima naprezanja